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ZXMC3A18DN8
Complementary 30V enhancement mode MOSFET
Summary
N-Channel = V (BR)DSS = 30V : R DS(on) = 0.025 ; I D = 7.6A
P-Channel = V (BR)DSS = -30V : R DS(on) = 0.035 ; I D = -6.3A
Description
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power
management applications.
Features
G1
D1
S1
G2
D2
S2
?
?
?
?
?
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Q1 N-Channel
S1
G1
S2
Q2 P-Channel
D1
D1
D2
Applications
?
?
Motor Drive
LCD backlighting
G2
SO8
D2
Ordering information
Device
ZXMC3A18DN8TC
Reel size
(inches)
13
Tape width
(mm)
12
Quantity
per reel
2500
Device marking
ZXMC
3A18
Issue 2 - September 2007
? Zetex Semiconductors plc 2007
1
www.zetex.com
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